SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 64, Issue 9, 2014, Pages 265-276

The effect of SPA-SiO2 tunnel oxide thickness for metal-insulator-silicon photoelectrochemical cells

(5) Scheuermann, Andrew G a Lu, David Q a Ito, Toru a,c Chidsey, Christopher E D b Mcintyre, Paul C a

a Stanford University (United States)

b STANFORD UNIVERSITY (United States)

c TOKYO ELECTRON LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ATOMIC LAYER DEPOSITION; CHARGE TRANSFER; DEPOSITION; DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTRODES; METAL INSULATOR BOUNDARIES; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTING SILICON; SILICON; TUNNEL JUNCTIONS; ULTRATHIN FILMS;

ELECTROCHEMICAL PERFORMANCE; LONG TERM STABILITY; LOW TEMPERATURES; METAL INSULATOR SILICONS; PHOTOELECTROCHEMICAL PROPERTIES; QUANTUM TUNNELING; TUNNEL OXIDE THICKNESS; VARYING THICKNESS;

SILICON OXIDES;

EID: 84921475438 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/06409.0265ecst Document Type: Conference Paper

Times cited : (10)

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