Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

Carbon

Volumn 79, Issue 1, 2014, Pages 388-392

  Kim, Woo Hee ^a   Park, Chang Soo ^b   Son, Jong Yeog ^c  

^a Stanford University   (United States)

^b Korea University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GRAPHENE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NICKEL; NICKEL OXIDE; NONVOLATILE STORAGE; OHMIC CONTACTS; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

DIP PEN LITHOGRAPHIES; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBON (GNR); MINIATURIZED SIZES; NANOGAP ELECTRODES; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY;

NANORIBBONS;

EID: 84920555128     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.07.081     Document Type: Article

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