Epitaxial growth of a single-domain hexagonal boron nitride monolayer

ACS Nano

Volumn 8, Issue 12, 2014, Pages 12063-12070

  Orlando, Fabrizio ^a,f   Lacovig, Paolo ^b   Omiciuolo, Luca ^a   Apostol, Nicoleta G ^b,c   Larciprete, Rosanna ^d   Baraldi, Alessandro ^a,b,e   Lizzit, Silvano ^b  

^a UNIVERSITY OF TRIESTE   (Italy)

^b SINCROTRONE TRIESTE   (Italy)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d CNR   (Italy)

^e LABORATORIO TASC   (Italy)

^f PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

chemical vapor deposition; hexagonal boron nitride; Ir(111); temperature programmed growth; X ray photoelectron diffraction

Indexed keywords

BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; DIFFRACTION PATTERNS; III-V SEMICONDUCTORS; INTERFEROMETRY; MONOLAYERS; NITRIDES; PHOTOELECTRONS; PHOTONS;

ENERGY DIFFERENCES; EPITAXIALLY GROWN; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); IR(111); PHOTOELECTRON DIFFRACTION; TEMPERATURE PROGRAMMED; X RAY PHOTO-ELECTRON DIFFRACTION;

BORON NITRIDE;

EID: 84919741396     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5058968     Document Type: Article

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