Understanding polymorphism in organic semiconductor thin films through nanoconfinement

Journal of the American Chemical Society

Volumn 136, Issue 49, 2014, Pages 17046-17057

  Diao, Ying ^a,b,c   Lenn, Kristina M ^d   Lee, Wen Ya ^a   Blood Forsythe, Martin A ^e   Xu, Jie ^f   Mao, Yisha ^a   Kim, Yeongin ^a   Reinspach, Julia A ^a,b   Park, Steve ^a   Aspuru Guzik, Alán ^e   Xue, Gi ^f   Clancy, Paulette ^d   Bao, Zhenan ^a,c   Mannsfeld, Stefan C B ^b,g  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d School of Operations Research and Industrial Engineering   (United States)

^e HARVARD UNIVERSITY   (United States)

^f NANJING UNIVERSITY   (China)

^g CENTER FOR ADVANCING ELECTRONICS DRESDEN CFAED   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CARRIER TRANSPORT; ELECTRONIC PROPERTIES; QUANTUM CHEMISTRY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

CHARGE-CARRIER MOBILITY; CRYSTALLINE THIN FILMS; ENGINEERING TECHNIQUES; GRAZING INCIDENCE X-RAY DIFFRACTION; NANOCONFINEMENT EFFECTS; ORGANIC SEMICONDUCTOR THIN FILMS; QUANTUM CHEMICAL CALCULATIONS; STRUCTURE PROPERTY RELATIONSHIPS;

FILM PREPARATION;

NANOFILM; PIGMENT;

ARTICLE; CHEMICAL STRUCTURE; CONFORMATIONAL TRANSITION; CRYSTAL; CRYSTAL STRUCTURE; CRYSTALLIZATION; MELTING POINT; MOLECULAR MECHANICS; NANOENGINEERING; PHASE TRANSITION; ROOM TEMPERATURE; SEMICONDUCTOR; STRUCTURE ACTIVITY RELATION; THERMODYNAMICS; TRANSITION TEMPERATURE;

EID: 84918586657     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja507179d     Document Type: Article

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