Understanding the limitations and impact factors of wide bandgap devices' high switching-speed capability in a voltage source converter

2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Volumn , Issue , 2014, Pages 7-12

  Zhang, Zheyu ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a   Costinett, Daniel ^a  

^a University of Tennessee   (United States)

Author keywords

Switching performance; Voltage source converter; Wide Bandgap devices

Indexed keywords

COOLING SYSTEMS; ENERGY GAP; POWER CONVERTERS;

DESIGN CRITERIA; IMPACTING FACTOR; INDUCTIVE LOADS; SOURCE AND DRAINS; SWITCHING PERFORMANCE; SWITCHING SPEED; VOLTAGE SOURCE CONVERTERS; WIDE BAND GAP;

SWITCHING;

EID: 84918531823     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WiPDA.2014.6964614     Document Type: Conference Paper

References (16)

1. B. Callanan. CREE CPWR AN-08. Application considerations for silicon carbide MOSFETs [Online]. Available: http://www.cree.com
2. A. Lidow, J. Strydom, M. d. Rooij, and D. Reusch, GaN Transistors for Efficient Power Conversion. El Segundo, CA: Power Conversion Publications, 2014.
3. Z. Weimin, X. Zhuxian, Z. Zheyu, F. Wang, L. M. Tolbert, and B. J. Blalock, "Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter," in Energy Conversion Congress and Exposition (ECCE), 2013 IEEE, 2013, pp. 3571-3578.
4. C. J. Cass, W. Yi, R. Burgos, T. P. Chow, F. Wang, and D. Boroyevich, "Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency," in Applied Power Electronics Conference, APEC 2007-Twenty Second Annual IEEE, 2007, pp. 345-351.
5. I. Josifovic, J. Popovic-Gerber, and J. A. Ferreira, "Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics," Power Electronics, IEEE Transactions on, vol. 27, pp. 3843-3854, 2012.
6. L. Qian, W. Shuo, A. C. Baisden, W. Fei, and D. Boroyevich, "EMI Suppression in Voltage Source Converters by Utilizing dc-link Decoupling Capacitors," Power Electronics, IEEE Transactions on, vol. 22, pp. 1417-1428, 2007.
7. C. Zheng, D. Boroyevich, P. Mattavelli, and K. Ngo, "A frequency-domain study on the effect of DC-link decoupling capacitors," in Energy Conversion Congress and Exposition (ECCE), 2013 IEEE, 2013, pp. 1886-1893.
8. http://epc-co.com/epc/.
9. C. Zheng, D. Boroyevich, and R. Burgos, "Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics," in Power Electronics Conference (IPEC), 2010 International, 2010, pp. 164-169.
10. Z. Zheyu, Z. Weimin, F. Wang, L. M. Tolbert, and B. J. Blalock, "Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration," in Energy Conversion Congress and Exposition (ECCE), 2012 IEEE, 2012, pp. 3950-3955.
11. Z. Zheyu, F. Wang, L. M. Tolbert, and B. J. Blalock, "Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration," Power Electronics, IEEE Transactions on, vol. 29, pp. 1986-1997, 2014.
12. L. Balogh, "Design and application guide for high speed MOSFET gate drive circuits," in Power Supply Design Seminar, 2001.
13. Z. Wei, H. Xiucheng, F. C. Lee, and L. Qiang, "Gate drive design considerations for high voltage cascode GaN HEMT," in Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE, 2014, pp. 1484-1489.
14. B. Mirafzal, G. L. Skibinski, R. M. Tallam, D. W. Schlegel, and R. A. Lukaszewski, "Universal Induction Motor Model With Low-to-High Frequency-Response Characteristics," Industry Applications, IEEE Transactions on, vol. 43, pp. 1233-1246, 2007.
15. L. Zhengyang, H. Xiucheng, Z. Wenli, F. C. Lee, and L. Qiang, "Evaluation of high-voltage cascode GaN HEMT in different packages," in Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE, 2014, pp. 168-173.
16. L. Zhenxian, N. Puqi, F. Wang, and L. Marlino, "Planar bond all: A new packaging technology for advanced automotive power modules," in Energy Conversion Congress and Exposition (ECCE), 2012 IEEE, 2012, pp. 438-443.