Metal seed layer thickness-induced transition from vertical to horizontal growth of MoS2 and WS2

Nano Letters

Volumn 14, Issue 12, 2014, Pages 6842-6849

  Jung, Yeonwoong ^a,c   Shen, Jie ^a,c   Liu, Yanhui ^a   Woods, John M ^a,c   Sun, Yong ^b   Cha, Judy J ^a,c  

^a Yale University   (United States)

^b Princeton University   (United States)

^c Energy Sciences Institute   (United States)

Author keywords

Layered material; metal dichalcogenide; MoS2; two dimensional material; vertical growth; WS2

Indexed keywords

MATERIALS PROPERTIES; MOLYBDENUM COMPOUNDS; TRANSITION METALS;

LAYERED MATERIAL; MOS2; TWO-DIMENSIONAL MATERIALS; VERTICAL GROWTH; WS2;

GROWTH (MATERIALS);

EID: 84916622952     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl502570f     Document Type: Article

References (27)

1. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
2. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275
3. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
4. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
5. 2 Substrate Small 2012, 8, 966-971
6. 2 Films Sci. Rep. 2013, 3, 1866
7. Lee, Y.-H.; Yu, L.; Wang, H.; Fang, W.; Ling, X.; Shi, Y.; Lin, C.-T.; Huang, J.-K.; Chang, M.-T.; Chang, C.-S. Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces Nano Lett. 2013, 13, 1852-1857
8. 2 Layers on Sapphire and Imaging Its Grain Boundary ACS Nano 2013, 7, 8963-8971
9. 2 Sheets: From Single Layer to Few Layers ACS Nano 2013, 7, 5235-5242
10. 2 Films with Vertically Aligned Layers Nano Lett. 2013, 13, 1341-1347
11. 2 Thin Films J. Phys. Chem. C 2013, 117, 26262-26268
12. 2 Nanofilms and Its Application in Improving Hydrogen Evolution Reaction Proc. Natl. Acad. Sci. U.S.A. 2013, 110, 19701-19706
13. 2 Nano Lett. 2010, 10, 1271-1275
14. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
15. 2 ACS Nano 2012, 7, 791-797
16. Podzorov, V.; Gershenson, M.; Kloc, C.; Zeis, R.; Bucher, E. High-Mobility Field-Effect Transistors On the Basis of Transition Metal Dichalcogenides Appl. Phys. Lett. 2004, 84, 3301-3303
17. 5 Room Temperature Modulation and Ambipolar Behavior Appl. Phys. Lett. 2012, 101, 013107
18. 2 Nano Lett. 2014, 14, 4314-4321
19. 2 Appl. Phys. Lett. 2013, 102, 252108
20. Gatensby, R.; McEvoy, N.; Lee, K.; Hallam, T.; Berner, N. C.; Rezvani, E.; Winters, S.; OBrien, M.; Duesberg, G. S. Controlled Synthesis of Transition Metal Dichalcogenide Thin Films for Electronic Applications Appl. Surf. Sci. 2014, 297, 139-146
21. 2 ACS Nano 2010, 4, 2695-2700
22. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
23. 2 Using Raman Spectroscopy Sci. Rep. 2013, 3, 1755
24. 2 Films Thin Solid Films 1993, 227, 90-94
25. 2 for Hydrogen Evolution Nano Lett. 2014, 14, 553-558
26. Cao, T.; Wang, G.; Han, W.; Ye, H.; Zhu, C.; Shi, J.; Niu, Q.; Tan, P.; Wang, E.; Liu, B. Valley-Selective Circular Dichroism of Monolayer Molybdenum Disulphide Nat. Commun. 2012, 3, 887
27. 2 Solid State Commun. 1972, 11, 941-944