Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

Applied Physics Letters

Volumn 105, Issue 22, 2014, Pages

  Hosseini, T ^a   Tomer, D ^b   Rajput, S ^b   Li, L ^b   Kouklin, N ^a  

^a University of Wisconsin Milwaukee   (United States)

^b UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC RESISTANCE; ELECTRON DEVICES; GRAPHENE; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICES; SILICON CARBIDE; THERMIONIC EMISSION; WIDE BAND GAP SEMICONDUCTORS;

HETEROJUNCTION DEVICES; IDEALITY FACTORS; INTERFACE BARRIER; JUNCTION PARAMETERS; MINORITY CARRIER INJECTION; PHOTOCONDUCTIVE GAINS; SEMICONDUCTOR SYSTEMS; SERIES RESISTANCES;

GRAPHENE DEVICES;

EID: 84915818826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4902877     Document Type: Article

References (22)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005). 10.1038/nature04233
3. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
4. Y. Lin, X. Li, D. Xie, T. Feng, Y. Chen, R. Song, H. Tian, T. Ren, M. Zhong, K. Wang, and H. Zhu, Energy Environ. Sci. 6, 108-115 (2013). 10.1039/c2ee23538b
5. S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, and A. F. Hebard, Phys. Rev. X 2, 011002 (2012).
6. S. Shivaraman, L. H. Herman, F. Rana, J. Park, and M. G. Spencer, Appl. Phys. Lett. 100, 183112 (2012). 10.1063/1.4711769
7. S. A. Reshanov, K. V. Emtsev, F. Speck, K.-Y. Gao, T. Seyller, G. Pensl, and L. Ley, Phys. Status Solidi B 245, 1369 (2008). 10.1002/pssb.200844083
8. T. Seyller, K. V. Emtsev, F. Speck, K.-Y. Gao, and L. Ley, Appl. Phys. Lett. 88, 242103 (2006). 10.1063/1.2213928
9. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). 10.1103/PhysRevLett.101.026803
10. Y. An, A. Behnam, E. Pop, and A. Ural, Appl. Phys. Lett. 102, 013110 (2013). 10.1063/1.4773992
11. J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, Phys. Rev. B 59, 7282-7284 (1999). 10.1103/PhysRevB.59.7282
12. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy, A. K. Geim, A. C. Ferrari, and A. K. Sood, Nat. Nanotechnol. 3, 210-215 (2008). 10.1038/nnano.2008.67
13. S. Khanna, S. Neeleshwar, and A. Noor, J. Electron Devices 9, 382 (2011).
14. H. Norde, J. Appl. Phys. 50, 5052 (1979). 10.1063/1.325607
15. S. Chuang, Physics of Electronic Devices (John Wiley & Sons, 1995), p. 76.
16. J. Kim, J. Hwang, J. Suh, S. Tongay, S. Kwon, C. Hwang, J. Wi, and J. Park, Appl. Phys. Lett. 103, 171604 (2013). 10.1063/1.4826642
17. S. Rajput, Y. Y. Li, M. Weinet, and L. Li, Nat. Commun. 4, 2752 (2013).
18. E. Rhoderick, Metal Semiconductor Contacts (Clarendon, Oxford, 1978).
19. X. Xu, N. M. Gabor, J. S. Alden, A. M. van der Zande, and P. L. McEuen, Nano Lett. 10, 525 (2010).
20. M. Omari and N. Kouklin, Appl. Phys. Lett. 98, 243113 (2011). 10.1063/1.3597410
21. T. Mueller, F. Xia, M. Freitag, J. Tsang, and P. Avouris, Phys. Rev. B 79, 245430 (2009). 10.1103/PhysRevB.79.245430
22. Z. Fang, B. Claflin, D. C. Look, F. Chai, and B. J. Odekirk, J. Electron Mater. 40, 2179 (2011). 10.1007/s11664-011-1741-7