Electronic structure and photoelectrical properties of Ag2In2SiSe6 and Ag2In2GeSe6

Optical Materials

Volumn 38, Issue , 2014, Pages 10-16

  Khyzhun, O Y ^a   Myronchuk, G L ^b   Zamuruyeva, O V ^b   Parasyuk, O V ^b  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b LESYA UKRAINKA EASTERN EUROPEAN NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Chalcogenide crystals; Electronic structure; Photoconductivity; X ray emission spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

CORE LEVELS; CRYSTAL STRUCTURE; ELECTROMAGNETIC WAVE EMISSION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GERMANIUM COMPOUNDS; ION BEAMS; ION BOMBARDMENT; PHOTOCONDUCTIVITY; PHOTOELECTRONS; PHOTONS; SELENIUM; SELENIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING SILVER COMPOUNDS; SILVER COMPOUNDS; SINGLE CRYSTAL SURFACES; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION; VALENCE BANDS; X RAY SCATTERING;

BRIDGMAN-STOCKBARGER METHOD; CHALCOGENIDE CRYSTALS; HIGH-RESISTANCE SEMICONDUCTORS; HORIZONTAL GRADIENT FREEZES; PHOTO-ELECTRICAL PROPERTIES; SPECIFIC ELECTRICAL CONDUCTIVITY; TEMPERATURE DEPENDENCE; X RAY EMISSION SPECTROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84915779500     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2014.09.020     Document Type: Article

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