메뉴 건너뛰기




Volumn 5, Issue 4, 2013, Pages 316-327

Electronic structure of quaternary chalcogenide Ag2In2Ge(Si)S6 single crystals and the influence of replacing Ge by Si: Experimental X-ray photoelectron spectroscopy and X-ray diffraction studies and theoretical calculations

Author keywords

Chalcogenide quaternary sulfides; DFT; XPS; XRD

Indexed keywords


EID: 84880390712     PISSN: 19472935     EISSN: 19472943     Source Type: Journal    
DOI: 10.1166/sam.2013.1460     Document Type: Article
Times cited : (48)

References (21)
  • 17
    • 33744691386 scopus 로고
    • Parametrized in J. P. Perdew and A. Zunger, Phys. Rev. B 8, 4822 (1973)
    • D. M. Ceperley and B. I. Ader, Phys. Rev. Lett. 45, 566 (1980); Parametrized in J. P. Perdew and A. Zunger, Phys. Rev. B 8, 4822 (1973).
    • (1980) Phys. Rev. Lett. , vol.45 , pp. 566
    • Ceperley, D.M.1    Ader, B.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.