Electronic properties of ZnWO4 based on ab initio FP-LAPW band-structure calculations and X-ray spectroscopy data

Materials Chemistry and Physics

Volumn 140, Issue 2-3, 2013, Pages 588-595

  Khyzhun, O Y ^a   Bekenev, V L ^a   Atuchin, V V ^b   Galashov, E N ^c   Shlegel, V N ^c  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

A. Oxides; A. Semiconductors; C. Ab initio calculations; C. Photoelectron spectroscopy; D. Electronic structure

Indexed keywords

AB INITIO CALCULATIONS; BAND STRUCTURE CALCULATION; CZOCHRALSKI TECHNIQUE; ENERGY DISTRIBUTIONS; EXPERIMENTAL STUDIES; FULL POTENTIAL-LINEARIZED AUGMENTED PLANE WAVES; LOW-THERMAL GRADIENTS; VALENCE BAND SPECTRA;

COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ION BEAMS; PHOTOELECTRON SPECTROSCOPY; SINGLE CRYSTALS; THREE DIMENSIONAL COMPUTER GRAPHICS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY; ZINC;

CALCULATIONS;

EID: 84878268564     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2013.04.010     Document Type: Article

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