Crystal growth, electron structure and photo induced optical changes in novel AgxGaxGe1-xSe2 (x = 0.333, 0.250, 0.200, 0.167) crystals

Optical Materials

Volumn 35, Issue 1, 2012, Pages 65-73

  Parasyuk, O V ^a   Fedorchuk, A O ^b   Gorgut, G P ^a   Khyzhun, O Y ^c   Wojciechowski, A ^d   Kityk, I V ^a,d  

^a LESYA UKRAINKA EASTERN EUROPEAN NATIONAL UNIVERSITY   (Ukraine)

^b LVIV NATIONAL UNIVERSITY OF VETERINARY MEDICINE AND BIOTECHNOLOGIES   (Ukraine)

^c FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^d CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Chalcogenide crystals; Optical properties; Structural properties

Indexed keywords

ATOMS; CONTINUOUS WAVE LASERS; CORE LEVELS; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; ION BOMBARDMENT; IONS; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; SELENIUM COMPOUNDS; SILVER COMPOUNDS; SINGLE CRYSTAL SURFACES; STRUCTURAL PROPERTIES; X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDE CRYSTALS; ELECTRON STRUCTURES; ION CURRENT DENSITY; NON-CENTROSYMMETRIC; ORTHORHOMBIC SPACE GROUPS; PHOTOINDUCED CHANGE; VALENCE BAND SPECTRA; X-RAY PHOTOELECTRONS;

SINGLE CRYSTALS;

EID: 84866042210     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2012.07.002     Document Type: Article

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