Ultralow Sub-1-nA operating current resistive memory with intrinsic non-linear characteristics

IEEE Electron Device Letters

Volumn 35, Issue 12, 2014, Pages 1239-1241

  Gaba, Siddharth ^a   Cai, Fuxi ^a   Zhou, Jiantao ^a   Lu, Wei D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

CBRAM; filament; rectification; RRAM; ultra low current.

Indexed keywords

ATOMIC LAYER DEPOSITION; C (PROGRAMMING LANGUAGE); COMPLIANCE CONTROL; COPPER; ELECTRODES; ENERGY CONSERVATION; FILAMENTS (LAMP); RANDOM ACCESS STORAGE;

CBRAM; COMPLIANCE CURRENT; CURRENT RECTIFICATIONS; LOW CURRENTS; NONLINEAR CHARACTERISTICS; RECTIFICATION; RECTIFYING BEHAVIORS; RRAM;

ELECTRIC RECTIFIERS;

EID: 84913551797     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2363618     Document Type: Article

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