Electrical conduction and reliability in dual-layered graphene heterostructure interconnects

IEEE Electron Device Letters

Volumn 35, Issue 12, 2014, Pages 1311-1313

  Jain, Nikhil ^a   Murphy, Michael ^a   Jacobs Gedrim, Robin ^a   Shanmugam, Mariyappan ^a   Yang, Fan ^a   Song, Eui Sang ^a   Yu, Bin ^a  

^a SUNY POLYTECHNIC INSTITUTE   (United States)

Author keywords

conduction; Graphene; heterostructure; hexagonal boron nitride; interconnects

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; HEAT CONDUCTION; NITRIDES; OPTICAL INTERCONNECTS; WIRE;

CHEMICAL VAPOR DEPOSITION PROCESS; ELECTRICAL CONDUCTION; ELEVATED TEMPERATURE; HETEROSTRUCTURE; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); MAXIMUM POWER DENSITY; MEAN TIME TO FAILURE;

GRAPHENE;

EID: 84913549100     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2360815     Document Type: Article

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