Unusual role of epilayer-substrate interactions in determining orientational relations in van der Waals epitaxy

Proceedings of the National Academy of Sciences of the United States of America

Volumn 111, Issue 47, 2014, Pages 16670-16675

  Liu, Lei ^a   Siegel, David A ^b   Chen, Wei ^c,d   Liu, Peizhi ^a   Guo, Junjie ^a,e   Duscher, Gerd ^a,e   Zhao, Chong ^f,g   Wang, Hao ^f,g   Wang, Wenlong ^g   Bai, Xuedong ^g   McCarty, Kevin F ^b   Zhang, Zhenyu ^c   Gu, Gong ^a  

^a University of Tennessee   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d UNIVERSITY OF TENNESSEE   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

^f PEKING UNIVERSITY   (China)

^g INSTITUTE OF PHYSICS   (China)

Author keywords

Graphene; Hexagonal boron nitride; Orientational relation; Two dimensional materials; Van der Waals epitaxy

Indexed keywords

COPPER; GRAPHENE;

ARTICLE; ATMOSPHERIC PRESSURE; CRYSTALLIZATION; DENSITY FUNCTIONAL THEORY; ELECTRON DIFFRACTION; STRUCTURE ANALYSIS; SURFACE PROPERTY; VAN DER WAALS EPITAXY; VAPOR;

EID: 84912124746     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1405613111     Document Type: Article

References (43)

1. Geim AK, Grigorieva IV (2013) Van der Waals heterostructures. Nature 499(7459): 419-425.
2. Yankowitz M, et al. (2012) Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nat Phys 8(5):382-386.
3. Dean C, et al. (2012) Graphene based heterostructures. Solid State Commun 152(15): 1275-1282.
4. Britnell L, et al. (2013) Resonant tunnelling and negative differential conductance in graphene transistors. Nat Commun 4:1794.
5. Feenstra RM, Jena D, Gu G (2012) Single-particle tunneling in doped grapheneinsulator- graphene junctions. J Appl Phys 111(4):043711.
6. Koma A, Saiki K, Sato Y (1989) Heteroepitaxy of a two-dimensional material on a three-dimensional material. Appl Surf Sci 41-42(2):451-456.
7. Koma A (1992) New epitaxial growth method for modulated structures using van der Waals interactions. Surf Sci 267(1-3):29-33.
8. Forrest SR (1997) Ultrathin organic films grown by organic molecular beam deposition and related techiques. Chem Rev 97(6):1793-1896.
9. Koma A (1999) Van der Waals epitaxy for highly lattice-mismatched systems. J Crystal Growth 201:236-241.
10. Yang W, et al. (2013) Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat Mater 12(9):792-797.
11. Tang S, et al. (2013) Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition. Sci Rep 3:2666.
12. Shi Y, et al. (2012) van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett 12(6):2784-2791.
13. Hwang J, et al. (2013) van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. ACS Nano 7(1):385-395.
14. Preobrajenski AB, Ng ML, Vinogradov AS, Mårtensson N (2008) Controlling graphene corrugation on lattice-mismatched substrates. Phys Rev B 78(7):073401.
15. Sutter P, Sadowski JT, Sutter E (2009) Graphene on Pt(111): Growth and substrate interaction. Phys Rev B 80(24):245411.
16. Emtsev KV, Speck F, Seyller T, Ley L, Riley D (2008) Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study. Phys Rev B 77(15):155303.
17. Wofford JM, Nie S, McCarty KF, Bartelt NC, Dubon OD (2010) Graphene Islands on Cu foils: The interplay between shape, orientation, and defects. Nano Lett 10(12): 4890-4896.
18. Ogawa Y, et al. (2012) Domain structure and boundary in single-layer graphene grown on Cu(111) and Cu(100) films. J Phys Chem Lett 3(2):219-226.
19. Liu L, et al. (2014) Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 343(6167):163-167.
20. Tay RY, et al. (2014) A systematic study of the atmospheric pressure growth of largearea hexagonal crystalline boron nitride film. J Mater Chem C 2(9):1650-1657.
21. Song L, et al. (2010) Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett 10(8):3209-3215.
22. Kim KK, et al. (2012) Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett 12(1):161-166.
23. Yu Q, et al. (2011) Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nat Mater 10(6):443-449.
24. Vlassiouk I, et al. (2011) Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene. ACS Nano 5(7):6069-6076.
25. Liu Y, Bhowmick S, Yakobson BI (2011) BN white graphene with "colorful" edges: The energies and morphology. Nano Lett 11(8):3113-3116.
26. Geick R, Perry CH (1966) Normal modes in hexagonal boron nitride. Phys Rev 146(2): 543-547.
27. Cho J, et al. (2011) Atomic-scale investigation of graphene grown on Cu foil and the effects of thermal annealing. ACS Nano 5(5):3607-3613.
28. Guo N, et al. (2012) Controllable growth of triangular hexagonal boron nitride domains on copper foils by an improved low-pressure chemical vapor deposition method. Nanotechnology 23(41):415605.
29. Hao Y, et al. (2013) The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 342(6159):720-723.
30. Zhou H, et al. (2013) Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene. Nat Commun 4:2096.
31. Harrison MJ, et al. (2006) Adsorbate-induced surface reconstruction and surface-stress changes in Cu(100)/O: Experiment and theory. Phys Rev B 74(16):165402.
32. Chen W, et al. (2012) Suppression of grain boundaries in graphene growth on superstructured Mn-Cu(111) surface. Phys Rev Lett 109(26):265507.
33. Zhang X, Xu Z, Hui L, Xin J, Ding F (2012) How the orientation of graphene is determined during chemical vapor deposition growth. J Phys ChemLett 3(19):2822-2827.
34. Kresse G, Furthmüller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B Condens Matter 54(16): 11169-11186.
35. Blöchl PE (1994) Projector augmented-wave method. Phys Rev B Condens Matter 50(24):17953-17979.
36. Kresse G, Joubert D (1999) From ultrasoft pseudopotentials to the projector augmented- wave method. Phys Rev B 59(3):1758-1775.
37. Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77(18):3865-3868.
38. Grimme S (2006) Semiempirical GGA-type density functional constructed with a longrange dispersion correction. J Comput Chem 27(15):1787-1799.
39. Bučko T, Hafner J, Lebègue S, Ángyán JG (2010) Improved description of the structure of molecular and layered crystals: Ab initio DFT calculations with van der Waals corrections. J Phys Chem A 114(43):11814-11824.
40. Lacovig P, et al. (2009) Growth of dome-shaped carbon nanoislands on Ir(111): The intermediate between carbidic clusters and quasi-free-standing graphene. Phys Rev Lett 103(16):166101.
41. Chen H, Zhu W, Zhang Z (2010) Contrasting behavior of carbon nucleation in the initial stages of graphene epitaxial growth on stepped metal surfaces. Phys Rev Lett 104(18):186101.
42. Joshi S, et al. (2012) Boron nitride on Cu(111): An electronically corrugated monolayer. Nano Lett 12(11):5821-5828.
43. Orofeo CM, Suzuki S, Kageshima H, Hibino H (2013) Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt. Nano Res 6(5):335.