Structure of β-AgGaO2; ternary I-III-VI2 oxide semiconductor with a wurtzite-derived structure

Journal of Solid State Chemistry

Volumn 222, Issue , 2015, Pages 66-70

  Nagatani, Hiraku ^a   Suzuki, Issei ^a   Kita, Masao ^b   Tanaka, Masahiko ^c   Katsuya, Yoshio ^c   Sakata, Osami ^c   Omata, Takahisa ^a  

^a OSAKA UNIVERSITY   (Japan)

^b TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

AgGaO2; Crystal structure; I III VI2 semiconductors; Wurtzite structure; X ray diffraction

Indexed keywords

COPPER COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; OXIDE SEMICONDUCTORS; RIETVELD ANALYSIS; SILVER COMPOUNDS; X RAY DIFFRACTION; ZINC SULFIDE;

AGGAO2; HIGH RESOLUTION POWDER DIFFRACTIONS; HIGH TEMPERATURE; INDIRECT BAND GAP; METALLIC SILVER; SYNCHROTRON X-RAY RADIATION; TETRAHEDRAL DISTORTIONS; WURTZITE STRUCTURE;

CRYSTAL STRUCTURE;

EID: 84912008197     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2014.11.012     Document Type: Article

References (31)

1. R.W.G. Wyckoff, Crystal Structure, second ed., John Wiley & Sons, New York (1964) 291-293.
2. H. Yanagi, S. Inoue, K. Ueda, H. Kawazoe, H. Hosono, N. Hamada, J. Appl. Phys. 88 (2000) 4159-4163.
3. K. Ueda, T. Hase, H. Yanagi, H. Kawazoe, H. Hosono, H. Ohta, M. Orita, M. Hirano, J. Appl. Phys. 89 (2001) 1790-1793.
4. H. Yanagi, T. Hase, S. Ibuki, K. Ueda, H. Hosono, Appl. Phys. Lett. 78 (2001) 1583-1585.
5. R. Nagarajan, N. Duan, M.K. Jayaraj, J. Li, K.A. Vanaja, A. Yokochi, A. Draeseke, J. Tate, A.W. Sleight, Int. J. Inorg. Mater. 3 (2001) 265-270.
6. K.A. Vanaja, R.S. Ajimsha, A.S. Asha, M.K. Jayaraj, Appl. Phys. Lett. 88 (2006) 212103.
7. H. Kawazoe, M. Yasukawa, H. Hyodo, K. Kurita, H. Yanagi, H. Hosono, Nature 389 (1997) 939-942.
8. R.W.G. Wyckoff, Crystal Structure, second ed., John Wiley & Sons, New York (1964) 299-301.
9. J. Leal-Gonzalez, S.S. Melibary, A.J. Smith, Acta Crystallogr. C 46 (1990) 2017-2019.
10. W. Hönle, G. Kühn, H. Neumann, Z. Anorg. Allg. Chem. 643 (1986) 161-168.
11. M. Marezio, Acta Crystallogr., Sect. A: Found. Crystallogr. 18 (1965) 481484.
12. J. Li, A.W. Sleight, J. Solid State Chem. 177 (2004) 889-894.
13. S. Ouyang, Z. Li, Z. Ouyang, T. Yu, J. Ye, Z. Zou, J. Phys. Chem. C 112 (2008) 3134-3141.
14. I. Suzuki, H. Nagatani, Y. Arima, M. Kita, T. Omata, Thin Solid Films 559 (2014) 112-115.
15. T. Omata, H. Nagatani, I. Suzuki, M. Kita, H. Yanagi, N. Ohashi, J. Am. Chem. Soc. 136 (2014) 3378-3381.
16. J.F.H. Nicholls, H. Gallangher, B. Henderson, C. Trager-Cowan, P.G. Middleton, L.P. O'Donnell, Mater. Res. Soc. Symp. Proc. 395 (1996) 535-539.
17. T. Omata, K. Tanaka, A. Tazuke, K. Nose, S. Otsuka-Yao-Matsuo, J. Appl. Phys. 103 (2008) 083706.
18. T. Omata, M. Kita, K. Nose, K. Tachibana, S. Otsuka-Yao-Matsuo, Jpn. J. Appl. Phys. 50 (2011) 031102.
19. T. Omata, K. Tanaka, S. Otsuka-Yao-Matsuo, Jpn. J. Appl. Phys. 50 (2011) 061102.
20. T. Omata, M. Kita, K. Tachibana, S. Otsuka-Yao-Matsuo, J. Solid State Chem. 188 (2012) 92-99.
21. I. Suzuki, H. Nagatani, Y. Arima, M. Kita, T. Omata, Appl. Phys. Lett. 103 (2013) 222107.
22. Y. Maruyama, H. Irie, K. Hashimoto, J. Phys. Chem. B 110 (2006) 23274.
23. S. Ouyang, N. Kikugawa, D. Chem, Z. Zou, J. Ye, J. Phys. Chem. 113 (2009) 1560.
24. M. Tanaka, Y. Katsuya, Y. Matsushita, O. Sakata, J. Ceram. Soc. Jpn. 121 (2013) 287-290.
25. F. Izumi, K. Momma, Solid State Phenom. 130 (2007) 15-20.
26. H.P. Müller, R. Hoppe, Z. Anorg. Allg. Chem. 611 (1992) 73-80.
27. S.C. Abrahams, J.L. Bernstein, Acta Crystallogr. B 25 (1969) 1233-1236.
28. R.D. Shannon, Acta Crystallogr. A 32 (1976) 751-767.
29. S. Ouyang, J. Ye, J. Am. Chem. Soc. 133 (2011) 7757-7763.
30. B.R. Nag, Electron Transport in Compound Semiconductors, Springer-Verlag, Berlin (1980) 21-39.
31. N.W. Johnson, J.A. McLeod, A. Moewes, J. Phys.: Condens. Matter 23 (2011) 445501.