Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Applied Physics Letters

Volumn 105, Issue 20, 2014, Pages

  Park, Helen Hejin ^a   Jayaraman, Ashwin ^a   Heasley, Rachel ^a   Yang, Chuanxi ^a   Hartle, Lauren ^a   Mankad, Ravin ^b   Haight, Richard ^b   Mitzi, David B ^b,c   Gunawan, Oki ^b   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; DEPOSITION; ZINC;

ALUMINUM INCORPORATION; GRADED BUFFER; ORDERS OF MAGNITUDE; PHOTOVOLTAIC APPLICATIONS; SULFUR CONTENTS; ZN(O , S) THIN FILM; ZN(O ,S);

ALUMINUM;

EID: 84911455550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4901899     Document Type: Article

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