메뉴 건너뛰기




Volumn 8, Issue 10, 2014, Pages 10899-10908

Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes

Author keywords

big data; epitaxial film growth; multivariate statistics; oxides; RHEED; surface diffraction

Indexed keywords

BIG DATA; CALCIUM COMPOUNDS; DATA ACQUISITION; EPITAXIAL FILMS; FOURIER ANALYSIS; K-MEANS CLUSTERING; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MULTIVARIANT ANALYSIS; OXIDES; PULSED LASER DEPOSITION; QUALITY CONTROL; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRONTIUM TITANATES; TITANIUM COMPOUNDS;

EID: 84908402772     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504730n     Document Type: Article
Times cited : (46)

References (30)
  • 1
    • 77949673960 scopus 로고    scopus 로고
    • The Structural Analysis Possibilities of Reflection High Energy Electron Diffraction
    • Ingle, N.; Yuskauskas, A.; Wicks, R.; Paul, M.; Leung, S. The Structural Analysis Possibilities of Reflection High Energy Electron Diffraction J. Phys. D: Appl. Phys. 2010, 43, 133001
    • (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 133001
    • Ingle, N.1    Yuskauskas, A.2    Wicks, R.3    Paul, M.4    Leung, S.5
  • 5
    • 0022669354 scopus 로고
    • Current Understanding and Applications of the RHEED Intensity Oscillation Technique
    • Dobson, P.; Joyce, B.; Neave, J.; Zhang, J. Current Understanding and Applications of the RHEED Intensity Oscillation Technique J. Cryst. Growth 1987, 81, 1-8
    • (1987) J. Cryst. Growth , vol.81 , pp. 1-8
    • Dobson, P.1    Joyce, B.2    Neave, J.3    Zhang, J.4
  • 6
    • 0031557645 scopus 로고    scopus 로고
    • In Situ Monitoring during Pulsed Laser Deposition of Complex Oxides Using Reflection High Energy Electron Diffraction under High Oxygen Pressure
    • Rijnders, G. J.; Koster, G.; Blank, D. H.; Rogalla, H. In Situ Monitoring During Pulsed Laser Deposition of Complex Oxides Using Reflection High Energy Electron Diffraction under High Oxygen Pressure Appl. Phys. Lett. 1997, 70, 1888-1890
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1888-1890
    • Rijnders, G.J.1    Koster, G.2    Blank, D.H.3    Rogalla, H.4
  • 10
    • 0030834675 scopus 로고    scopus 로고
    • Direct Evidence for the Step Density Model in the Initial Stages of the Layer-by-Layer Homoepitaxial Growth of GaAs (111) A
    • Holmes, D.; Sudijono, J.; McConville, C.; Jones, T.; Joyce, B. Direct Evidence for the Step Density Model in the Initial Stages of the Layer-by-Layer Homoepitaxial Growth of GaAs (111) A Surf. Sci. 1997, 370, L173-L178
    • (1997) Surf. Sci. , vol.370 , pp. 173-L178
    • Holmes, D.1    Sudijono, J.2    McConville, C.3    Jones, T.4    Joyce, B.5
  • 11
    • 0001035350 scopus 로고
    • Homoepitaxial Growth of Iron and a Real Space View of Reflection-High-Energy-Electron Diffraction
    • Stroscio, J. A.; Pierce, D.; Dragoset, R. Homoepitaxial Growth of Iron and a Real Space View of Reflection-High-Energy-Electron Diffraction Phys. Rev. Lett. 1993, 70, 3615
    • (1993) Phys. Rev. Lett. , vol.70 , pp. 3615
    • Stroscio, J.A.1    Pierce, D.2    Dragoset, R.3
  • 12
    • 0001581174 scopus 로고    scopus 로고
    • Origin of Electron Diffraction Oscillations during Crystal Growth
    • Braun, W.; Däweritz, L.; Ploog, K. Origin of Electron Diffraction Oscillations During Crystal Growth Phys. Rev. Lett. 1998, 80, 4935
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 4935
    • Braun, W.1    Däweritz, L.2    Ploog, K.3
  • 13
    • 0033514603 scopus 로고    scopus 로고
    • Interpretation of Reflection High-Energy Electron Diffraction Oscillation Phase
    • Mitura, Z.; Dudarev, S.; Whelan, M. Interpretation of Reflection High-Energy Electron Diffraction Oscillation Phase J. Cryst. Growth 1999, 198, 905-910
    • (1999) J. Cryst. Growth , vol.198 , pp. 905-910
    • Mitura, Z.1    Dudarev, S.2    Whelan, M.3
  • 14
    • 0031101176 scopus 로고    scopus 로고
    • Role of the Step Density in Reflection High-Energy Electron Diffraction: Questioning the Step Density Model
    • Korte, U.; Maksym, P. Role of the Step Density in Reflection High-Energy Electron Diffraction: Questioning the Step Density Model Phys. Rev. Lett. 1997, 78, 2381
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 2381
    • Korte, U.1    Maksym, P.2
  • 15
    • 0345498329 scopus 로고    scopus 로고
    • Reflection High-Energy Electron Diffraction during Substrate Rotation: A New Dimension for in Situ Characterization
    • Braun, W.; Möller, H.; Zhang, Y.-H. Reflection High-Energy Electron Diffraction During Substrate Rotation: A New Dimension for in Situ Characterization J. Vac. Sci. Technol., B 1998, 16, 1507-1510
    • (1998) J. Vac. Sci. Technol., B , vol.16 , pp. 1507-1510
    • Braun, W.1    Möller, H.2    Zhang, Y.-H.3
  • 17
    • 0000792840 scopus 로고
    • Ccd-Based Reflection High-Energy Electron Diffraction Detection and Analysis System
    • Barlett, D.; Snyder, C.; Orr, B.; Clarke, R. Ccd-Based Reflection High-Energy Electron Diffraction Detection and Analysis System Rev. Sci. Instrum. 1991, 62, 1263-1269
    • (1991) Rev. Sci. Instrum. , vol.62 , pp. 1263-1269
    • Barlett, D.1    Snyder, C.2    Orr, B.3    Clarke, R.4
  • 18
  • 19
    • 65549117009 scopus 로고    scopus 로고
    • Principal Component and Spatial Correlation Analysis of Spectroscopic-Imaging Data in Scanning Probe Microscopy
    • Jesse, S.; Kalinin, S. V. Principal Component and Spatial Correlation Analysis of Spectroscopic-Imaging Data in Scanning Probe Microscopy Nanotechnology 2009, 20, 085714
    • (2009) Nanotechnology , vol.20 , pp. 085714
    • Jesse, S.1    Kalinin, S.V.2
  • 21
    • 84955015442 scopus 로고
    • A Review of the Geometrical Fundamentals of Reflection High-Energy Electron Diffraction with Application to Silicon Surfaces
    • Mahan, J. E.; Geib, K. M.; Robinson, G.; Long, R. G. A Review of the Geometrical Fundamentals of Reflection High-Energy Electron Diffraction with Application to Silicon Surfaces J. Vac. Sci. Technol., A 1990, 8, 3692-3700
    • (1990) J. Vac. Sci. Technol., A , vol.8 , pp. 3692-3700
    • Mahan, J.E.1    Geib, K.M.2    Robinson, G.3    Long, R.G.4
  • 22
  • 24
    • 0028461142 scopus 로고
    • Initial Growth Stage and Optical Properties of a Three-Dimensional InAs Structure on GaAs
    • Nabetani, Y.; Ishikawa, T.; Noda, S.; Sasaki, A. Initial Growth Stage and Optical Properties of a Three-Dimensional InAs Structure on GaAs J. Appl. Phys. 1994, 76, 347-351
    • (1994) J. Appl. Phys. , vol.76 , pp. 347-351
    • Nabetani, Y.1    Ishikawa, T.2    Noda, S.3    Sasaki, A.4
  • 25
    • 3743112425 scopus 로고
    • Oscillation of the Lattice Relaxation in Layer-by-Layer Epitaxial Growth of Highly Strained Materials
    • Massies, J.; Grandjean, N. Oscillation of the Lattice Relaxation in Layer-by-Layer Epitaxial Growth of Highly Strained Materials Phys. Rev. Lett. 1993, 71, 1411
    • (1993) Phys. Rev. Lett. , vol.71 , pp. 1411
    • Massies, J.1    Grandjean, N.2
  • 26
    • 36549095770 scopus 로고
    • Observation of Alternating Reconstructions of Silicon (001) 2× 1 and 1× 2 Using Reflection High-Energy Electron Diffraction during Molecular Beam Epitaxy
    • Sakamoto, T.; Kawamura, T.; Hashiguchi, G. Observation of Alternating Reconstructions of Silicon (001) 2× 1 and 1× 2 Using Reflection High-Energy Electron Diffraction During Molecular Beam Epitaxy Appl. Phys. Lett. 1986, 48, 1612-1614
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1612-1614
    • Sakamoto, T.1    Kawamura, T.2    Hashiguchi, G.3
  • 27
    • 0023984366 scopus 로고
    • The Application of RHEED Intensity Effects to Interrupted Growth and Interface Formation during MBE Growth of GaAs/(Al, Ga) as Structures
    • Joyce, B.; Zhang, J.; Neave, J.; Dobson, P. The Application of RHEED Intensity Effects to Interrupted Growth and Interface Formation During MBE Growth of GaAs/(Al, Ga) as Structures Appl. Phys. A: Mater. Sci. Process. 1988, 45, 255-260
    • (1988) Appl. Phys. A: Mater. Sci. Process. , vol.45 , pp. 255-260
    • Joyce, B.1    Zhang, J.2    Neave, J.3    Dobson, P.4
  • 28
    • 34248577812 scopus 로고    scopus 로고
    • On the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations during Ge (001) Homoepitaxy by Molecular Beam Epitaxy
    • Shin, B.; Leonard, J. P.; McCamy, J. W.; Aziz, M. J. On the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations During Ge (001) Homoepitaxy by Molecular Beam Epitaxy J. Vac. Sci. Technol., A 2007, 25, 221-224
    • (2007) J. Vac. Sci. Technol., A , vol.25 , pp. 221-224
    • Shin, B.1    Leonard, J.P.2    McCamy, J.W.3    Aziz, M.J.4
  • 29
    • 35148837091 scopus 로고    scopus 로고
    • Modeling RHEED Intensity Oscillations in Multilayer Epitaxy: Determination of the Ehrlich-Schwoebel Barrier in Ge (001) Homoepitaxy
    • Shin, B.; Aziz, M. J. Modeling RHEED Intensity Oscillations in Multilayer Epitaxy: Determination of the Ehrlich-Schwoebel Barrier in Ge (001) Homoepitaxy Phys. Rev. B 2007, 76, 165408
    • (2007) Phys. Rev. B , vol.76 , pp. 165408
    • Shin, B.1    Aziz, M.J.2
  • 30
    • 84903478903 scopus 로고    scopus 로고
    • Deep Data Analysis of Conductive Phenomena on Complex Oxide Interfaces: Physics from Data Mining
    • Strelcov, E.; Belianinov, A.; Hsieh, Y.-H.; Jesse, S.; Baddorf, A. P.; Chu, Y.-H.; Kalinin, S. V. Deep Data Analysis of Conductive Phenomena on Complex Oxide Interfaces: Physics from Data Mining ACS Nano 2014, 8, 6449-6457
    • (2014) ACS Nano , vol.8 , pp. 6449-6457
    • Strelcov, E.1    Belianinov, A.2    Hsieh, Y.-H.3    Jesse, S.4    Baddorf, A.P.5    Chu, Y.-H.6    Kalinin, S.V.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.