B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1011-1015

  Desrues, T ^a   Ribeyron, P J ^a   Vandeneynde, A ^a   Ozanne, A S ^a   Souche, F ^a   Munoz D ^a   Denis, C ^a   Diouf, D ^b   Kleider, J P ^b  

^a CEA INES   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CONTACT MATERIAL; CONTACT WIDTH; EMITTER LAYERS; FILL FACTOR; INTERDIGITATED BACK CONTACTS; P-TYPE; SERIES RESISTANCES; SILICON HETEROJUNCTIONS;

HETEROJUNCTIONS; SOLAR CELLS;

SILICON;

EID: 77952560000     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982766     Document Type: Conference Paper

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