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Volumn 113, Issue 16, 2014, Pages

Defect removal in the course of directed self-assembly is facilitated in the vicinity of the order-disorder transition

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATION THEORY; DEFECTS; FREE ENERGY; MEAN FIELD THEORY; MOLECULAR ORBITALS; ORDER DISORDER TRANSITIONS;

EID: 84908032389     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.113.168301     Document Type: Article
Times cited : (111)

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    • This shift chiefly stems from an inappropriate description of the disordered phase by the mean-field treatment [J. Glaser, P. Medapuram, T.M. Beardsley, M.W. Matsen, and D.C. Morse, Phys. Rev. Lett. 113, 068302 (2014)] implying that (Equation presented) is much less affected by fluctuations than (Equation presented). The condition, (Equation presented), results in a lower limit for (Equation presented) and, thereby, for the smallest length scale achievable with high-(Equation presented) materials. Using (Equation presented), we obtain (Equation presented), corresponding to (Equation presented) monomeric repeat units of polystyrene or (Equation presented). PRLTAO 0031-9007 10.1103/PhysRevLett.113.068302
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