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Journal of Materials Chemistry C

Volumn 2, Issue 36, 2014, Pages 7674-7680

Tuning memory performances from WORM to flash or DRAM by structural tailoring with different donor moieties

(8) Zhou, Feng a He, Jing Hui b Liu, Quan a Gu, Pei Yang a Li, Hua a Xu, Guo Qin b Xu, Qing Feng a Lu, Jian Mei a

a SOOCHOW UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; FLASH MEMORY; INTERFACES (MATERIALS);

CHARGE DELOCALIZATION; DYNAMIC RANDOM ACCESS MEMORY; ELECTRON-DONATING ABILITY; MEMORY PERFORMANCE; MOLECULAR SIMULATIONS; NON-VOLATILE MEMORY; ORGANIC MATERIALS; ORGANIC MOLECULES;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84906547513 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc00943f Document Type: Article

Times cited : (24)

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