Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 187-188

  Kshirsagar, C ^a   Xu, W ^a   Kim, C H ^a   Koester, S J ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENCHMARKING; DESIGN; MONOLAYERS; MOSFET DEVICES; SCALABILITY; SILICON;

BAND TO BAND TUNNELING; DYNAMIC MEMORY CELLS; DYNAMIC RANDOM ACCESS MEMORY; ELECTROSTATIC SIMULATIONS; GATE INDUCED DRAIN LEAKAGES; MOLYBDENUM DISULFIDE; PERFORMANCE AND SCALABILITIES; TRANSITION METAL DICHALCOGENIDES;

MOLYBDENUM COMPOUNDS;

EID: 84906544761     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872360     Document Type: Conference Paper

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