Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Journal of Applied Physics

Volumn 116, Issue 7, 2014, Pages

  Leonard, E ^a   Arzel, L ^a   Tomassini, M ^a   Zabierowski, P ^b   Fuertes Marron D ^c   Barreau, N ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; SOLAR CELLS;

DEVICE CHARACTERISTICS; DEVICE OPERATIONS; ELECTRONIC TRANSPORT; INTERFACE RECOMBINATION; RECOMBINATION MECHANISMS; SPACE CHARGE REGIONS; STANDARD DEVICES; THIN FILMS SOLAR CELLS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84906542795     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4891478     Document Type: Article

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