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Acta Materialia

Volumn 58, Issue 17, 2010, Pages 5572-5577

Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration

(5) Barreau, N a Painchaud, T a Couzinie Devy F a Arzel, L a Kessler, J a

a UNIVERSITÉ DE NANTES (France)

Author keywords

Grain boundary; Grain size; Recrystallization; Sodium

Indexed keywords

CRYSTALLIZATION; EXCITONS; GRAIN BOUNDARIES; RECRYSTALLIZATION (METALLURGY); SODIUM;

CAUSAL RELATIONSHIPS; CU(IN , GA)SE2; GRAIN BOUNDARY MIGRATIONS; GRAIN BOUNDARY MOTIONS; GRAIN SIZE; MODEL-BASED OPC; NOMINAL COMPOSITION; THREE-STEP PROCESS;

FILM GROWTH;

EID: 77956340126 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/j.actamat.2010.06.025 Document Type: Article

Times cited : (41)

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