Influence of Ga-notch position on recombination processes in Cu(In,Ga)Se2-based solar cells investigated by means of photoluminescence

Thin Solid Films

Volumn 535, Issue 1, 2013, Pages 336-339

  Pawlowski M ^a   Zabierowski, P ^a   Bacewicz, R ^a   Barreau, N ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITÉ DE NANTES   (France)

Author keywords

Band gap gradient; CIGSe; Ga notch; Photoluminescence

Indexed keywords

CAPACITANCE-VOLTAGE CURVE; CIGSE; CIGSE SOLAR CELLS; GA-NOTCH; PHOTOLUMINESCENCE SIGNALS; RECOMBINATION PROCESS; SEQUENTIAL ELEMENTS; THREE-STAGE PROCESS;

DEFECTS; PHOTOLUMINESCENCE; SOLAR CELLS;

GALLIUM;

EID: 84878207317     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.02.022     Document Type: Conference Paper

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