Thickness dependence of the charge-density-wave transition temperature in VSe2

Applied Physics Letters

Volumn 105, Issue 6, 2014, Pages

  Yang, Jiyong ^a   Wang, Weike ^b   Liu, Yan ^a   Du, Haifeng ^a   Ning, Wei ^a   Zheng, Guolin ^a   Jin, Chiming ^a   Han, Yuyan ^a   Wang, Ning ^a   Yang, Zhaorong ^b   Tian, Mingliang ^a   Zhang, Yuheng ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

TEMPERATURE;

ELECTRON CONCENTRATION; HALL RESISTIVITY; MICRO-MECHANICAL; NANO-FLAKES; RESISTIVITY MEASUREMENT; THICKNESS DEPENDENCE;

CHARGE DENSITY WAVES;

EID: 84905984362     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4893027     Document Type: Article

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