Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition

Applied Physics Letters

Volumn 104, Issue 26, 2014, Pages

  Muratore, C ^a,b   Hu, J J ^b,c   Wang, B ^d   Haque, M A ^d   Bultman, J E ^b,c   Jespersen, M L ^b,c   Shamberger, P J ^b   McConney, M E ^b   Naguy, R D ^b   Voevodin, A A ^b  

^a University of Dayton   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^d The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOTECHNOLOGY; PHYSICAL VAPOR DEPOSITION; SILICA; SUBSTRATES; TEMPERATURE; VACUUM APPLICATIONS; VAN DER WAALS FORCES;

CONTROLLED SYNTHESIS; ELECTRONIC TRANSPORT MEASUREMENTS; HIGHLY ORIENTED PYROLITIC GRAPHITES; LOWER TEMPERATURES; OPTICAL AND ELECTRONIC PROPERTIES; PHYSICAL VAPOR DEPOSITION PROCESS; SEAMLESS INTEGRATION; TWO DIMENSIONAL (2 D);

SULFUR COMPOUNDS;

EID: 84905643368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4885391     Document Type: Article

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