Characterization of the p-type Sn1-xMnxO2 oxide semiconductor nanoparticles by Sol-Gel method

Electronic Materials Letters

Volumn 9, Issue 3, 2013, Pages 283-286

  Lee, Chil Hyoung ^a,b   Choi, Doo Jin ^b   Oh, Young Jei ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

mobility; nanoparticle; oxide semiconductor; p type; Sn1 xMnxO2

Indexed keywords

COMPOSITIONAL CHANGES; DOPING EFFECTS; HALL EFFECT MEASUREMENT; LOW DOPING CONCENTRATIONS; OXIDE SEMICONDUCTOR; P-TYPE; P-TYPE CONDUCTION; P-TYPE OXIDE SEMICONDUCTORS;

CARRIER MOBILITY; ELECTRIC PROPERTIES; NANOPARTICLES; OXIDE MINERALS; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; TIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MANGANESE;

EID: 84878065540     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-2140-9     Document Type: Article

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