Nature of gap states in GeSbTe phase change memory materials1

Canadian Journal of Physics

Volumn 92, Issue 7-8, 2014, Pages 671-674

  Yu, X ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM;

DEFECT STATE; ELECTRON SPINS; ENERGY RANGES; GAP STATE; MODULATED PHOTOCURRENT; RANDOM NETWORK; VALENCE ALTERNATION PAIRS;

DEFECTS;

EID: 84904352468     PISSN: 00084204     EISSN: None     Source Type: Journal    
DOI: 10.1139/cjp-2013-0531     Document Type: Conference Paper

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