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Volumn 71, Issue 2, 2014, Pages 329-332

Effects of nitridation durations on the synthesis of wurtzite GaN thin films by spin coating method

Author keywords

Nitride materials; Sol gel processes; Thin films; X ray diffraction

Indexed keywords

COATINGS; NITRIDATION; SOL-GEL PROCESS; THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

EID: 84904060143     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-014-3381-x     Document Type: Article
Times cited : (8)

References (10)
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  • 2
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  • 3
    • 79952734813 scopus 로고    scopus 로고
    • Growth of GaN films with controlled out-of-plane texture on Si wafers
    • 10.1016/j.tsf.2011.01.281
    • Wang ZL, Hong JL, Chang YL, Ding Y, Snyder RL (2011) Growth of GaN films with controlled out-of-plane texture on Si wafers. Thin Solid Films 519:3608-3611
    • (2011) Thin Solid Films , vol.519 , pp. 3608-3611
    • Wang, Z.L.1    Hong, J.L.2    Chang, Y.L.3    Ding, Y.4    Snyder, R.L.5
  • 4
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    • Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method
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  • 7
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    • Synthesis of two-dimensional gallium nitride via spin coating method: Influences of nitridation temperatures
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    • Fong CY, Ng SS, Yam FK, Abu Hassan H, Hassan Z (2013) Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures. J Sol-gel Sci Technol 68:95-101
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.