Crystallinity studies of GaN/Si films grown at different temperatures by infrared reflectance spectroscopy

Materials Chemistry and Physics

Volumn 91, Issue 2-3, 2005, Pages 404-408

  Ng, S S ^a   Hassan, Z ^a   Hashim, M R ^a   Kordesch, M E ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b OHIO UNIVERSITY   (United States)

Author keywords

Crystal structure; Infrared spectroscopy; Nitrides; Phonons

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; ELECTRON RESONANCE; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHONONS; SILICON NITRIDE; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; INFRARED OPTICAL PROPERTIES; INFRARED REFLECTANCE SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 15344345269     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.11.047     Document Type: Article

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