Investigation of the relative density of deep defects in Cu(In,Ga)Se 2 thin films dependent on Ga content by transient photocapacitance method

Japanese Journal of Applied Physics

Volumn 53, Issue 6, 2014, Pages

  Hu, Xiaobo ^a   Sakurai, Takeaki ^a   Yamada, Akimasa ^b   Ishizuka, Shogo ^b   Niki, Shigeru ^b   Akimoto, Katsuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DEFECTS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

CU (IN ,GA)SE; DEEP DEFECTS; DEVICE PERFORMANCE; GA CONTENT; PHOTOCAPACITANCE; QUANTITATIVE COMPARISON; RELATIVE DENSITY;

GALLIUM;

EID: 84903141768     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.068008     Document Type: Article

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