Graphene based low insertion loss electroabsorption modulator on SOI waveguide

Optics Express

Volumn 22, Issue 12, 2014, Pages 15292-15297

  Mohsin, Muhammad ^a   Schall, Daniel ^a   Otto, Martin ^a   Noculak, Achim ^b   Neumaier, Daniel ^a   Kurz, Heinrich ^a  

^a AMO GMBH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROABSORPTION MODULATORS; GRAPHENE; INSERTION LOSSES; INTERFEROMETERS; MODULATORS; OPTICAL CONDUCTIVITY; SILICON ON INSULATOR TECHNOLOGY; WAVEGUIDES;

1550 NM; LOW INSERTION LOSS; MODULATION DEPTH; SILICON ON INSULATOR WAVEGUIDE; SOI WAVEGUIDES;

LIGHT MODULATORS;

EID: 84902987647     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.015292     Document Type: Article

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