Analyzing carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Applied Physics Letters

Volumn 104, Issue 22, 2014, Pages

  Sellers, D G ^a   Polly, S ^b   Hubbard, S M ^b   Doty, M F ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; PHOTOELECTROCHEMICAL CELLS; PHOTONS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR ENERGY; TWO PHOTON PROCESSES;

CARRIER ESCAPE MECHANISM; CARRIER TRAPPING; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; PHOTOCURRENT MEASUREMENT; SINGLE JUNCTION SOLAR CELLS; THIRD GENERATION; TWO-PHOTON ABSORPTIONS;

PHOTOCURRENTS;

EID: 84902440494     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4881181     Document Type: Article

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