Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

Journal of Applied Physics

Volumn 115, Issue 20, 2014, Pages

  Halder, Nripendra N ^a   Biswas, Pranab ^a   Nagabhushan, B ^a   Kundu, Souvik ^b   Biswas, D ^a   Banerji, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; INFRARED DETECTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON WAFERS;

CARRIER TRANSPORT MECHANISMS; CONDUCTION BAND OFFSET; II-IV SEMICONDUCTORS; INFRARED DETECTION; INFRARED PHOTODETECTOR; NEXT GENERATION SYSTEMS; TRANSPORT PHENOMENA; X RAY PHOTOEMISSION SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 84902007568     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4880738     Document Type: Article

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