Reversal of rectification in fullerene-based devices

Synthetic Metals

Volumn 195, Issue , 2014, Pages 91-96

  Pakhomov, Georgy L ^a,c   Drozdov, Mikhail N ^a,c   Travkin, Vlad V ^a   Lopatin, Mikhail A ^b   Shashkin, Vladimir I ^a,c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b G A RAZUVAEV INSTITUTE OF ORGANOMETALLIC CHEMISTRY   (Russian Federation)

^c LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

Fullerene; Interfaces; Organic diodes; ToF SIMS

Indexed keywords

ALUMINUM COATINGS; DEPTH PROFILING; ELECTRIC PROPERTIES; ELECTRODES; FULLERENES; GLASS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETRONS; PHOTOVOLTAIC CELLS; SECONDARY ION MASS SPECTROMETRY;

BUCKMINSTERFULLERENES; CHEMICAL COMPOSITIONS; INDIUM TIN OXIDE LAYERS; MAGNETRON-SPUTTERED ALUMINUM; ORGANIC DIODES; PHOTOVOLTAIC ACTIVITIES; SECONDARY ION MASS SPECTROSCOPIES (SIMS); TOF SIMS;

SUBSTRATES;

EID: 84901981305     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2014.05.006     Document Type: Article

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