Analytical solution for charge-carrier injection into an insulating layer in the drift diffusion approximation

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Shashkin, V I ^a   Vostokov, N V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; CHARGE CARRIERS; CIVIL AVIATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MOSFET DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); POLYNOMIAL APPROXIMATION; SEMICONDUCTOR MATERIALS; STRUCTURAL METALS;

ANALYTICAL SOLUTIONS; BULK EFFECTS; CARRIER INJECTIONS; CONTACT PHENOMENONS; DIFFUSION APPROXIMATIONS; DRIFT DIFFUSIONS; FINITE THICKNESSES; HETEROBARRIERS; I LAYERS; INSULATING LAYERS; LIMITING CASES; SEMI-CONDUCTORS; SEMICONDUCTOR LAYERS; SPACE CHARGES; TRANSIENT REGIMES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149260029     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050297     Document Type: Article

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