A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 1113-1116

  Kazior, T E ^a   LaRoche, J R ^a   Lubyshev, D ^b   Fastenau, J M ^b   Liu, W K ^b   Urteaga, M ^c   Ha, W ^c   Bergman, J ^c   Choe, M J ^c   Bulsara, M T ^d   Fitzgerald, E A ^d   Smith, D ^a   Clark, D ^a   Thompson, R ^a   Drazek, C ^e   Daval, N ^e   Benaissa, L ^f   Augendre, E ^f  

^a RAYTHEON COMPANY   (United States)

^b IQE INC   (United States)

^c TELEDYNE SCIENTIFIC COMPANY   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e PARC TECHNOLOGIQUE DES FONTAINES   (France)

^f CEA LETI   (France)

Author keywords

CMOS integrated circuits; Differential amplifiers; Heterojunction bipolar transistors; Indium phosphide; Monolithic integrated circuits; Silicon

Indexed keywords

BUILDING BLOCKES; CMOS TRANSISTORS; ENGINEERED-SUBSTRATE; INP; INP-HBT; LOW-POWER DISSIPATION; MIXED-SIGNAL CIRCUITS; MONOLITHIC INTEGRATION; SI CMOS; SILICON SUBSTRATES;

BIPOLAR TRANSISTORS; DIFFERENTIAL AMPLIFIERS; ELECTRIC SIGNAL SYSTEMS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; INSULATING MATERIALS; INTEGRATED CIRCUITS; LUMPED PARAMETER NETWORKS; MICROWAVES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 70549102250     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165896     Document Type: Conference Paper

References (6)

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