Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization

Thin Solid Films

Volumn 540, Issue , 2013, Pages 266-270

  Tojo, Yosuke ^a   Miura, Atsushi ^a,b   Ishikawa, Yasuaki ^a,c   Yamashita, Ichiro ^a,c,d   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

Metal induced lateral crystallization; N (2 aminoethyl) 3 aminopropyltrimethoxysilane; Polycrystalline silicon; Self assembled monolayers; Thin film transistors

Indexed keywords

CATALYSTS; MONOLAYERS; NICKEL; ORGANIC POLYMERS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AMINOPROPYLTRIMETHOXYSILANE; FIELD-EFFECT MOBILITIES; LARGE-GRAIN; METAL-INDUCED LATERAL CRYSTALLIZATION; NI METAL; POLY-SI THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; SMALL CONCENTRATION;

SELF ASSEMBLED MONOLAYERS;

EID: 84901835777     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.06.006     Document Type: Article

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