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Volumn 2, Issue 24, 2014, Pages 4759-4763

Fabrication of free-standing Al2O3 nanosheets for high mobility flexible graphene field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ESTERS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHITE; GRAPHITE ELECTRODES; NANOSHEETS;

EID: 84901798432     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c4tc00041b     Document Type: Article
Times cited : (4)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.