Facile fabrication of nanogap electrodes for suspended graphene characterization using direct ion beam patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8973, Issue , 2014, Pages

  Qi, Zhengqing John ^a   Johnson, A T Charlie ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ION BEAMS; MECHANICAL PROPERTIES; MICROANALYSIS; MICROFABRICATION; MICROMACHINING; MILLING (MACHINING); NANORIBBONS; NANOSTRUCTURES; SILICON NITRIDE;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BUFFERED OXIDE ETCH; COMPARATIVE STUDIES; GRAPHENE NANORIBBONS; HIGH FIELD TRANSPORT PROPERTIES; ION BEAM PATTERNING; NEGATIVE TONE RESIST; SILICON NITRIDE MEMBRANE;

GRAPHENE;

EID: 84900484918     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2037853     Document Type: Conference Paper

References (15)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A., Electric field effect in atomically thin carbon films. Science 2004, 306 (5696), 666-669.
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A., Two-dimensional gas of massless Dirac fermions in graphene. Nature 2005, 438 (7065), 197-200.
3. Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L., Ultrahigh electron mobility in suspended graphene. Solid State Commun 2008, 146 (9-10), 351-355.
4. Takagi, S. In High mobility channel CMOS technologies for realizing high performance LSI's, 2009 IEEE Custom Integrated Circuits Conference (CICC), 13-16 Sept. 2009, Piscataway, NJ, USA, IEEE: Piscataway, NJ, USA, 2009; pp 153-60.
5. Chen, J. H.; Jang, C.; Xiao, S. D.; Ishigami, M.; Fuhrer, M. S., Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nat Nanotechnol 2008, 3 (4), 206-209.
6. Balandin, A. A.; Ghosh, S.; Bao, W. Z.; Calizo, I.; Teweldebrhan, D.; Miao, F.; Lau, C. N., Superior thermal conductivity of single-layer graphene. Nano Lett 2008, 8 (3), 902-907.
7. Bolotin, K. I.; Sikes, K. J.; Hone, J.; Stormer, H. L.; Kim, P., Temperature-dependent transport in suspended graphene. Phys Rev Lett 2008, 101 (9).
8. Lee, C.; Wei, X. D.; Kysar, J. W.; Hone, J., Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 2008, 321 (5887), 385-388.
9. Bunch, J. S.; van der Zande, A. M.; Verbridge, S. S.; Frank, I. W.; Tanenbaum, D. M.; Parpia, J. M.; Craighead, H. G.; McEuen, P. L., Electromechanical resonators from graphene sheets. Science 2007, 315 (5811), 490-493.
10. Luo, Z. T.; Kim, S.; Kawamoto, N.; Rappe, A. M.; Johnson, A. T. C., Growth Mechanism of Hexagonal-Shape Graphene Flakes with Zigzag Edges. Acs Nano 2011, 5 (11), 9154-9160.
11. Luo, Z. T.; Lu, Y.; Singer, D. W.; Berck, M. E.; Somers, L. A.; Goldsmith, B. R.; Johnson, A. T. C., Effect of Substrate Roughness and Feedstock Concentration on Growth of Wafer-Scale Graphene at Atmospheric Pressure. Chem Mater 2011, 23 (6), 1441-1447.
12. Moser, J.; Barreiro, A.; Bachtold, A., Current-induced cleaning of graphene. Appl Phys Lett 2007, 91 (16).
13. Lu, Y.; Merchant, C. A.; Drndic, M.; Johnson, A. T. C., In Situ Electronic Characterization of Graphene Nanoconstrictions Fabricated in a Transmission Electron Microscope. Nano Lett 2011, 11 (12), 5184-5188.
14. Malec, C. E.; Elkus, B.; Davidovic, D., Vacuum-annealed Cu contacts for graphene electronics. Solid State Commun 2011, 151 (23), 1791-1793.
15. Scipioni, L.; Huynh, C.; Ananth, M.; Zaluzec, N. J.; Miller, D. J.; Hiller, J. M.; Arenal, R., Plasmonic Devices Fabricated with Helium Ion Microscopy. Carl Zeiss White Paper: 2012.