Versatile electronic and magnetic properties of SnSe2 nanostructures induced by the strain

Journal of Physical Chemistry C

Volumn 118, Issue 17, 2014, Pages 9251-9260

  Huang, Yucheng ^a   Ling, Chongyi ^a   Liu, Hai ^a   Wang, Sufan ^a   Geng, Baoyou ^a  

^a ANHUI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; MAGNETIC MOMENTS; NANORIBBONS; NANOSTRUCTURES;

ELECTRONIC AND MAGNETIC PROPERTIES; EXPERIMENTAL REALIZATIONS; FIRST-PRINCIPLES CALCULATION; METAL-SEMICONDUCTOR TRANSITIONS; PARTIAL DENSITY OF STATE; SEMICONDUCTOR METALS; THEORETICAL INVESTIGATIONS; TRANSITION METAL ATOMS;

MAGNETIC PROPERTIES;

EID: 84899854788     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp5013158     Document Type: Article

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