Edge-, width- and strain-dependent semiconductor-metal transition in SnSe nanoribbons

RSC Advances

Volumn 4, Issue 14, 2014, Pages 6933-6938

  Huang, Yucheng ^a   Ling, Chongyi ^a   Liu, Hai ^a   Wang, Sufang ^a  

^a ANHUI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; NANORIBBONS; SEMICONDUCTING SELENIUM COMPOUNDS; TENSILE STRAIN; TIN;

CONDUCTION-BAND MINIMUM; ELECTRONIC CALCULATION; EXPERIMENTAL INVESTIGATIONS; FIRST-PRINCIPLES CALCULATION; METAL-SEMICONDUCTOR TRANSITIONS; NANO-ELECTROMECHANICAL SENSORS; PARTIAL CHARGE DISTRIBUTION; SEMICONDUCTOR-METAL TRANSITION;

METALS;

EID: 84892657824     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c3ra45724a     Document Type: Article

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