Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Applied Physics Letters

Volumn 104, Issue 5, 2014, Pages

  Nakamura, Eiji ^a   Ueno, Kohei ^a   Ohta, Jitsuo ^b   Fujioka, Hiroshi ^a,b,c   Oshima, Masaharu ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; GLASS INDUSTRY; HOLE MOBILITY; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; SUBSTRATES; TEMPERATURE;

ELECTROLUMINESCENCE EMISSION; LARGE-AREA GLASS SUBSTRATE; LIGHT EMITTING DEVICES; LOW GROWTH TEMPERATURE; P TYPE CONDUCTIVITY; PULSED SPUTTERING; RECTIFYING CHARACTERISTICS; SEMI-INSULATING GAN;

LOW TEMPERATURE PRODUCTION;

EID: 84899804794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4864283     Document Type: Article

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