Electrical transport model of silicene as a channel of field effect transistor

Journal of Nanoscience and Nanotechnology

Volumn 14, Issue 6, 2014, Pages 4178-4184

  Sadeghi, Hatef ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Analytical model; Carrier concentration; Electronic properties; Silicene

Indexed keywords

ANALYTICAL MODELS; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; MODELS; NUMERICAL METHODS;

ELECTRICAL TRANSPORT MODEL; GATE VOLTAGES; HONEYCOMB LATTICES; NEUTRALITY POINT; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; SILICENE; SILICON ATOMS; SINGLE LAYER;

FIELD EFFECT TRANSISTORS;

GRAPHITE; NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MODELS, CHEMICAL; NANOSTRUCTURES; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84899768873     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2014.8914     Document Type: Article

References (69)

1. H. Sadeghi, M. T. Ahmadi, B. I. Ishak, S. M. Mousavi, and R. Ismail, J. Comput. Theor. Nanosci. 8, 1993 (2011).
2. S. Sangtarash, H. Sadeghi, M. T. Ahmadi, M. H. Ghadiry, S. Anwar, and R. Ismail, J. Comput. Theor. Nanosci. 9, 1554 (2012).
3. G. Pitcher, New Electronics 44, 8 (2011).
4. Z. Ni, Q. Liu, K. Tang, J. Zheng, J. Zhou, R. Qin, Z. Gao, D. Yu, and J. Lu, Nemo Lett. 12, 113 (2011).
5. K. Krishnamoorthy, A. Ramadoss, and S.-J. Kim, Sci. Adv. Mater. 5, 406 (2013).
6. B. A. Gonfa, M. A. E. Khakani, and D. Ma, Rev. Nanosci. Nanotechnol. 1, 22 (2012).
7. A. Neto and K. Novoselov, Mater. Express 1, 10 (2011).
8. F. K. A. Hamid, S. Anwar, N. A. Amin, Z. Johari, H. Sadeghi, M. A. Nurudin, M. T. Ahmadi, and R. Ismail, J. Comput. Theor. Nanosci. 10, 964 (2013).
9. E. H. Song and Y. F. Zhu, Nanosci. Nanotechnol. Lett. 5, 198 (2013).
10. P. Karthika, N. Rajalakshmi, and K. S. Dhathathreyan, J. Nanosci. Nanotechnol. 13, 1746 (2013).
11. H. Nakano, T. Mitsuoka, M. Harada, K. Horibuchi, H. Nozaki, N. Takahashi, T. Nonaka, Y. Seno, and H. Nakamura, Angew. Chem. Int. Ed. 45, 6303 (2006).
12. S. Cahangirov, M. Topsakal, E. Aktiirk, H. Şahin, and S. Ciraci, Phys. Rev. Lett. 102, 236804 (2009).
13. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Phys. Rev. Lett. 108, 155501 (2012).
14. H. Jamgotchian, Y. Colignon, N. Hamzaoui, B. Ealet, J. Hoarau, B. Aufray, and J. Bibérian, J. Phys.: Condens. Matter 24, 172001 (2012).
15. B. Feng, Z. Ding, S. Meng, Y. Yao, X. He, P. Cheng, L. Chen, and K. Wu, Nano Lett. 12, 3507 (2012).
16. H. Enriquez, S. Vizzini, A. Kara, B. Lalmi, and H. Oughaddou, J. Phys.: Condens. Matter 24, 314211 (2012).
17. B. Lalmi, H. Oughaddou, H. Enriquez, A. Kara, S. Vizzini, B. Ealet, and B. Aufray, Appl. Phys. Lett. 97, 223109 (2010).
18. B. Aufray, A. Kara, S. Vizzini, H. Oughaddou, C. Leandri, B. Ealet, and G. Le Lay, Appl. Phys. Lett. 96, 183102 (2010).
19. L. Chen, C.-C. Liu, B. Feng, X. He, P. Cheng, Z. Ding, S. Meng, Y. Yao, and K. Wu, Phys. Rev. Lett. 109, 056804 (2012).
20. C. L. Lin, R. Arafune, K. Kawahara, N. Tsukahara, E. Minamitani, Y. Kim, N. Takagi, and M. Kawai, Applied Physics Express 5, 5802 (2012).
21. L. Meng, Y. Wang, L. Zhang, S. Du, R. Wu, L. Li, Y. Zhang, G. Li, H. Zhou, W A. Hofer, and H.-J. Gao, Nano Lett. 13, 685 (2013).
22. A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada-Takamura, Phys. Rev. Lett. 108, 245501 (2012).
23. L. Chen, B. Feng, and K. Wu, arXiv.1301.1431 (2013).
24. Z. Zhao, F. Tian, X. Dong, Q. Li, Q. Wang, H. Wang, X. Zhong, B. Xu, D. Yu, J. He, H.-T. Wang, Y. Ma, and Y. Tian, J. Am. Chem. Soc. 134, 12362 (2012).
25. A. O'hare, F. V. Kusmartsev, and K. I. Kugel, Nano Lett. 12, 1045 (2012).
26. S. Huang, W. Kang, and L. Yang, arXiv:1212.2305 (2012).
27. J. Kim, M. V. Fischetti, and S. Aboud, Physical Review B 86, 205323 (2012).
28. C. Kamal, A. Chakrabarti, A. Banerjee, and S. Deb, arXiv: 1210.4733 (2012).
29. G. G. Guzmán-Verri and L. C. Lew Yan Voon, Physical Review B 76, 075131 (2007).
30. T. Suzuki and Y. Yokomizo, Physica E: Low-Dimensional Systems and Nanostructures 42, 2820 (2010).
31. M. Houssa, G. Pourtois, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 97, 112106 (2010).
32. G. Liu, M. S. Wu, C. Y. Ouyang, and B. Xu, EPL (Europhys. Lett.) 99, 17010 (2012).
33. A. Ince and S. Erkoc, Physica Status Solidi B-Basic Solid State Physics 249, 74 (2012).
34. A. Kara, H. Enriquez, A. P. Seitsonen, L. C. Lew Yan Voon, S. Vizzini, B. Aufray, and H. Oughaddou, Surf. Sci. Rep. 67, 1 (2012).
35. P. De Padova, C. Quaresima, C. Ottaviani, P. M. Sheverdyaeva, P. Moras, C. Carbone, D. Topwal, B. Olivieri, A. Kara, H. Oughaddou, B. Aufray, and G. Le Lay, Appl. Phys. Lett. 96, 261905 (2010).
36. X. T. An, Y. Y. Zhang, J. J. Liu, and S. S. Li, arXiv.1203.6726 (2012).
37. X. T. An, Y. Y. Zhang, J. J. Liu, and S. S. Li, arXiv.1206.1114 (2012).
38. C. Xu, G. Luo, Q. Liu, J. Zheng, Z. Zhang, S. Nagase, Z. Gao, and J. Lu, Nanoscale 4, 3111 (2012).
39. Q. Ran, C.-H. Zhang, and J. Shen, Chem. Phys. 397, 42 (2012).
40. R. Qin, C.-H. Wang, W. Zhu, and Y. Zhang, AIP Advances 2, 022159 (2012).
41. A. Ince and S. Erkoc, Computational Materials Science 50, 865 (2011).
42. Y. L. Song, Y. Zhang, J. M. Zhang, and D. B. Lu, Appl. Surf. Sci. 256, 6313 (2010).
43. C. Lian, Z. Yang, and J. Ni, Chem. Phys. Lett. 561, 77 (2013).
44. P. D. Padova, C. Leandri, S. Vizzini, C. Quaresima, P. Perfetti, B. Olivieri, H. Oughaddou, B. Aufray, and G. L. Lay, Nano Lett. 8, 2299 (2008).
45. P. De Padova, C. Quaresima, B. Olivieri, P. Perfetti, and G. Le Lay, J. Phys. D: Appl. Phys. 44, 312001 (2011).
46. P. De Padova, C. Quaresima, B. Olivieri, P. Perfetti, and G. L. Lay, Appl. Phys. Lett. 98, 081909 (2011).
47. J. Kim, M. V. Fischetti, and S. Aboud, Computational Electronics (IWCE), 2012 15th International Workshop on, Madison, US (2012), Vol. 1.
48. Y. L. Song, Y. Zhang, J. M. Zhang, D. B. Lu, and K. W. Xu, European Physical Journal B 79, 197 (2011).
49. D. Jose and A. Datta, PCCP 13, 7304 (2011).
50. N. Gao, W. T. Zheng, and Q. Jiang, PCCP 14, 257 (2012).
51. Y Ding and Y Wang, Appl. Phys. Lett. 100, 083102 (2012).
52. Y C. Cheng, Z. Y Zhu, and U. Schwingenschlögl, EPL (Europhys. Lett.) 95, 17005 (2011).
53. X.-Q. Wang, H.-D. Li, and J.-T. Wang, PCCP 14, 3031 (2012).
54. L. Pan, H. J. Liu, Y W. Wen, X. J. Tan, H. Y Lv, J. Shi, and X. F. Tang, Appl. Surf. Sci. 258, 10135 (2012).
55. Y Ding and Y Wang, Appl. Surf. Sci. 101, 013102 (2012).
56. P. Zhang, X. D. Li, C. H. Hu, S. Q. Wu, and Z. Z. Zhu, Phys. Lett. A 376, 1230 (2011).
57. T. H. Osborn, A. A. Farajian, O. V. Pupysheva, R. S. Aga, and L. C. L. Y Voon, Chem. Phys. Lett. 511, 101 (2011).
58. M. Houssa, E. Scalise, K. Sankaran, G. Pourtois, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 98, 223107 (2011).
59. L. C. Lew Yan Voon, E. Sandberg, R. S. Aga, and A. A. Farajian, Appl. Phys. Lett. 97, 163114 (2010).
60. C.-W. Zhang and S.-S. Yan, J. Phys. Chem. C 116, 4163 (2012).
61. F Zheng and C. Zhang, Nanoscale Research Letters 7, 422 (2012).
62. M. Ezawa, New Journal of Physics 14, 033003 (2012).
63. C.-H. Zhang, Q. Ran, and J. Shen, Comput. Phys. Commun. 183, 30 (2012).
64. M. Ezawa, arXiv: 1301.0971 (2013).
65. J. M. Soler, E. Artacho, J. D. Gale, A. Garcia, J. Junquera, P. Ordejón, and D. Sanchez-Portal, J. Phys.: Condens. Matter 14, 2745 (2002).
66. C. C. Liu, H. Jiang, and Y Yao, Physical Review B 84, 195430 (2011).
67. C. Kamal, arXiv: 1202.2636 (2012).
68. S. Datta, Quantum Transport: Atom to Transistor, Cambridge University Press, New York, US (2005).
69. P. Avouris, Z. H. Chen, and V Perebeinos, Nat. Nanotechnol. 2, 605 (2007).