The effect of effective channel length on a silicon nanowire fin field effect transistor

Journal of Computational and Theoretical Nanoscience

Volumn 10, Issue 4, 2013, Pages 964-967

  Hamid, Fatimah K A ^a   Anwar, Sohail ^b   Amin, N Aziziah ^a   Johari, Zaharah ^a   Sadeghi, Hatef ^a   Nurudin, M A ^a   Ahmadi, M T ^a   Ismail, Razali ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Channel length modulation; SiNWFinFET

Indexed keywords

CHANNEL LENGTH MODULATION; CURRENT VOLTAGE; EFFECTIVE CHANNEL LENGTH; EXPERIMENTAL DATUM; FIN FIELD EFFECT TRANSISTORS; QUANTUM CONFINEMENT EFFECTS; SILICON NANOWIRES; SINWFINFET;

FIELD EFFECT TRANSISTORS; MODULATION; NANOWIRES;

SILICON;

EID: 84879741500     PISSN: 15461955     EISSN: 15461963     Source Type: Journal    
DOI: 10.1166/jctn.2013.2793     Document Type: Article

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