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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2820-2825

Energy bands of atomic monolayers of various materials: Possibility of energy gap engineering

(2) Suzuki, Tatsuo a,b Yokomizo, Yushi b

a TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY (Japan)

b TOKYO METROPOLITAN COLLEGE OF AERONAUTICAL ENGINEERING (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MONOLAYERS; B3LYP/6-31G; CALCULATION METHODS; CARBON ATOMS; ENERGY BAND; ENERGY DISPERSIONS; GAAS; GAUSSIANS; HIGH MOBILITY; IMPURITY ATOMS; INDIRECT SEMICONDUCTOR; NOVEL DEVICES; PERIODIC BOUNDARY CONDITIONS; QUANTUM CHEMICAL CALCULATIONS; QUANTUM HALL EFFECT; ROOM TEMPERATURE; SEMI-METALS;

CRYSTAL ATOMIC STRUCTURE; DENSITY FUNCTIONAL THEORY; DIAMOND FILMS; DISPERSIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STATES; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALVANOMAGNETIC EFFECTS; GERMANIUM; GRAPHENE; HALL MOBILITY; IMPURITIES; MONOLAYERS; ORGANIC POLYMERS; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON CARBIDE; SOLIDS; STRUCTURAL DESIGN; STRUCTURAL OPTIMIZATION;

ATOMS;

EID: 77957979785 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2010.04.031 Document Type: Conference Paper

Times cited : (57)

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