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Volumn 9, Issue 10, 2012, Pages 1554-1557

Schottky current in carbon nanotube-metal contact

Author keywords

Carbon Nanotube; Modeling; Schottky Contact; Schottky Current

Indexed keywords

ALTERNATIVE MATERIALS; APPLIED VOLTAGES; CIRCUIT MINIATURIZATION; CURRENT VOLTAGE; FERMI-DIRAC INTEGRAL; NANOTUBE DIAMETERS; ONE-DIMENSIONAL MATERIALS; PARABOLIC BANDS; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SILICON-BASED TECHNOLOGY; TECHNICAL LIMITATIONS; UNSTABLE STRUCTURES;

EID: 84868089046     PISSN: 15461955     EISSN: 15461963     Source Type: Journal    
DOI: 10.1166/jctn.2012.2243     Document Type: Article
Times cited : (11)

References (16)
  • 1
    • 0003808119 scopus 로고    scopus 로고
    • Devices-Basic Principles 3rd edn, McGraw-Hill, New York, US
    • D. A. Neamen, Semiconductor Physics and Devices-Basic Principles, 3rd edn, McGraw-Hill, New York, US (2003).
    • (2003) Semiconductor Physics
    • Neamen, D.A.1
  • 9
    • 80051556707 scopus 로고    scopus 로고
    • Carbon nanotube capacitance model in degenerate and nondegenerate regimes
    • Malaysia
    • M. T. Ahmadi, J. F. Webb, N. A. Amin, S. M. Mousavi, H. Sadeghi, M. R. Neilchiyan, and R. Ismail, carbon nanotube capacitance model in degenerate and nondegenerate regimes, 4th Global Conference on Power Control and Optimization (PCO2010), Malaysia (2011), Vol. 1337, pp. 173-176.
    • (2011) 2010) , vol.1337 , pp. 173-176
    • Ahmadi, M.T.1    Webb, J.F.2    Amin, N.A.3    Mousavi, S.M.4    Sadeghi, H.5    Neilchiyan, M.R.6    Ismail, R.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.