Strain modulated electronic properties of silicon nanoribbons with armchair edges

Chemical Physics Letters

Volumn 561-562, Issue , 2013, Pages 77-81

  Lian, Chao ^a   Yang, Zailin ^a   Ni, Jun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; BAND GAP VARIATION; FIELD EFFECTS; NANO DEVICE; POTENTIAL APPLICATIONS; SILICON NANORIBBONS; TIGHT-BINDING CALCULATIONS;

CALCULATIONS; ENERGY GAP; NANORIBBONS; NANOSTRUCTURES; SILICON; STRAIN;

ELECTRONIC PROPERTIES;

EID: 84874649419     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2013.01.029     Document Type: Article

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