Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy

Journal of Electronic Materials

Volumn 34, Issue 10, 2005, Pages 1349-1356

  Van Nostrand, J E ^a   Albrecht, J D ^a   Cortez, R ^a   Leedy, K D ^a   Johnson, B ^b   O'Keefe, M J ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

Chalcopyrite nitrides; Epitaxy; Molecular beam epitaxy (MBE)

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITE NITRIDES; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (X-TEM); GROWTH MOUNDS; THIN SOLID FILMS;

NITRIDES;

EID: 27144536611     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0261-8     Document Type: Article

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