Growth and characterization of ZnGeN2 by using remote-plasma enhanced metalorganic vapor phase epitaxy

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 188-191

  Misaki, T ^a   Tsuchiya, K ^a   Sakai, D ^a   Wakahara, A ^a   Okada, H ^a   Yoshida, A ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINA; ALUMINUM OXIDE; ENERGY GAP; GERMANIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; TEMPERATURE DISTRIBUTION;

ABSORPTION AND PHOTOLUMINESCENCE; BAND GAP ENERGY; DIRECT TRANSITION; EPITAXIAL RELATIONSHIPS; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE PEAK; SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENCE;

ZINC COMPOUNDS;

EID: 9944245296     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390019     Document Type: Conference Paper

References (11)

1. M. Maunaye and J. Lang, Mater. Res. Bull. 5, 793 (1970).
2. M. Wintenberger, M. Maunaye, and Y. Laurent, Mater. Res. Bull. 8, 1049 (1973).
3. W. L. Larson, H. P. Maruska, and D. A. Stevenson, J. Electrochem. Soc. 121, 1673 (1974).
4. L. D. Zhu, P. H. Maruska, P. E. Norris, P. W. Yip, and L. O. Bouthillette, MRS. Internet J. Nitride Semicond. Res. 4, G3.8 (1999).
5. S. Kikkawa and H. Morisaka, Solid State Commun. 112, 513 (1999).
6. L. D. Zhu, P. E. Norris, and L. O. Bouthillette, Mater. Res. Soc. Symp. Proc. 607, 291 (2000).
7. S. L. Limpijumnong, S. N. Rashkeev, and W. R. L. Lambrecht, MRS. Internet J. Nitride Semicond. Res. 4, G6.11 (1999).
8. T. Misaki, X. Wu, A. Wakahara, and A. Yoshida, IPAP Conf. Series 1, 685 (2000).
9. A. Wakahara, T. Tsuchiya, and A. Yoshida, J. Cryst. Growth 99, 385 (1990).
10. T. Misaki, A. Wakahara, H. Okada, and A. Yoshida, J. Cryst. Growth (to be submitted).
11. Y. P. Varshni, Physica 34, 149 (1967).